Thermal stability of amorphous carbon films deposited by pulsed laser ablation

Citation
S. Rey et al., Thermal stability of amorphous carbon films deposited by pulsed laser ablation, APPL PHYS A, 71(4), 2000, pp. 433-439
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
71
Issue
4
Year of publication
2000
Pages
433 - 439
Database
ISI
SICI code
0947-8396(200010)71:4<433:TSOACF>2.0.ZU;2-H
Abstract
Diamond-like carbon (DLC) films have been grown on Si substrates at ambient temperature by the pulsed-laser ablation technique, using pulses of differ ent durations both in the nano- and picosecond ranges and at various energy fluences. The stability of these films was investigated as a function of t hermal anneals performed in UHV conditions up to 1273 K. Their physico-chem ical properties have been characterized by different techniques including X -ray photoemission, Auger electron and electron-energy-loss spectroscopies, Raman scattering, spectroscopic ellipsometry and atomic-force microscopy. The thermal stability of the films has been demonstrated to be related to t heir initial structural (sp(3)/sp(2) ratio) and chemical (contaminant) prop erties. DLC layers prepared under optimized conditions have been found to s how a very good thermal stability up to 900 K.