Diamond-like carbon (DLC) films have been grown on Si substrates at ambient
temperature by the pulsed-laser ablation technique, using pulses of differ
ent durations both in the nano- and picosecond ranges and at various energy
fluences. The stability of these films was investigated as a function of t
hermal anneals performed in UHV conditions up to 1273 K. Their physico-chem
ical properties have been characterized by different techniques including X
-ray photoemission, Auger electron and electron-energy-loss spectroscopies,
Raman scattering, spectroscopic ellipsometry and atomic-force microscopy.
The thermal stability of the films has been demonstrated to be related to t
heir initial structural (sp(3)/sp(2) ratio) and chemical (contaminant) prop
erties. DLC layers prepared under optimized conditions have been found to s
how a very good thermal stability up to 900 K.