Diode laser spectroscopy using two modes of an InAsSb/InAsSbP laser near 3.6 mu m

Citation
S. Civis et al., Diode laser spectroscopy using two modes of an InAsSb/InAsSbP laser near 3.6 mu m, APP PHYS B, 71(4), 2000, pp. 481-485
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS B-LASERS AND OPTICS
ISSN journal
09462171 → ACNP
Volume
71
Issue
4
Year of publication
2000
Pages
481 - 485
Database
ISI
SICI code
0946-2171(200010)71:4<481:DLSUTM>2.0.ZU;2-A
Abstract
A new type of multimode semiconductor laser, based on InAsSb/InAsSbP hetero structures, is described. This continuous laser working in a broad range of temperatures (30-100 K) was rested using a closed-cycle He-cryostat and it s quality was demonstrated using the laser spectroscopy of gases absorbing in the 2800 cm(-1) region. Two different laser modes were used to increase the spectral range. The spectral characteristics and tunability of the lase r were explored as a function of heat-sink temperature and drive current wi th the aim of developing its use for high-resolution spectroscopy. The lase r has potential applications in the field of chemistry, atmospheric researc h and the study of the kinetics of reactive species.