Silicon-based organic light-emitting diode operating at a wavelength of 1.5 mu m

1.5-mu m light-emitting diodes which operate at room temperature have been fabricated on silicon substrates. The devices use an erbium-containing orga nic light-emitting diode (OLED) structure which utilizes p(++) silicon as t he hole injection contact. The OLEDs use N, N'-diphenyl-N,N'-bis(3-methyl)- 1,1'-biphenyl-4,4'-diamine as the hole transporting layer and erbium tris(8 -hydroxyquinoline) as the electron conducting and emitting layer. (C) 2000 American Institute of Physics. [S0003-6951(00)00841-X].