Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy

Authors
Buyanova, IA Pozina, G Hai, PN Thinh, NQ Bergman, JP Chen, WM Xin, HP Tu, CW
Citation
Ia. Buyanova et al., Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy, APPL PHYS L, 77(15), 2000, pp. 2325-2327
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
15
Year of publication
2000
Pages
2325 - 2327
Database
ISI
SICI code
0003-6951(20001009)77:15<2325:MFRTAI>2.0.ZU;2-5
Abstract
A systematic investigation of the effect of rapid thermal annealing (RTA) o n optical properties of undoped GaNAs/GaAs structures is reported. Two effe cts are suggested to account for the observed dramatic improvement in the q uality of the GaNxAs1-x/GaAs quantum structures after RTA: (i) improved com position uniformity of the GaNxAs1-x alloy, deduced from the photoluminesce nce (PL), PL excitation and time-resolved measurements; and (ii) significan t reduction in the concentration of competing nonradiative defects, reveale d by the optically detected magnetic resonance studies. (C) 2000 American I nstitute of Physics. [S0003-6951(00)00441-1].