Highly stable dye-sensitized solid-state solar cell with the semiconductor4CuBr 3S(C4H9)(2) as the hole collector

Authors
Tennakone, K Senadeera, GKR De Silva, DBRA Kottegoda, IRM
Citation
K. Tennakone et al., Highly stable dye-sensitized solid-state solar cell with the semiconductor4CuBr 3S(C4H9)(2) as the hole collector, APPL PHYS L, 77(15), 2000, pp. 2367-2369
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
15
Year of publication
2000
Pages
2367 - 2369
Database
ISI
SICI code
0003-6951(20001009)77:15<2367:HSDSSC>2.0.ZU;2-B
Abstract
Construction of a dye-sensitized solid-state solar cell with the semiconduc tor 4CuBr 3S(C4H9)(2) as the hole collector is reported. The cell is unusua lly stable compared to dye-sensitized solid state cells reported previously and delivers a short-circuit photocurrent and an open-circuit voltage of s imilar to 4.3 mA cm(-2) and 400 mV respectively, at 1.5 air mass, 1000 W m( -2) sunlight. (C) 2000 American Institute of Physics. [S0003-6951(00)03139- 9].