Self-assembled Ge nanostructures as field emitters

Authors
Tondare, VN Birajdar, BI Pradeep, N Joag, DS Lobo, A Kulkarni, SK
Citation
Vn. Tondare et al., Self-assembled Ge nanostructures as field emitters, APPL PHYS L, 77(15), 2000, pp. 2394-2396
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
15
Year of publication
2000
Pages
2394 - 2396
Database
ISI
SICI code
0003-6951(20001009)77:15<2394:SGNAFE>2.0.ZU;2-7
Abstract
Self-assembled two-dimensional arrays of Ge islands on Si(111)7x7 were grow n by depositing Ge on Si(111)7x7 substrates held at 650 K. It was observed that these islands were conical in shape as well as nearly uniform in size and shape. Consequently, the substrates of about 1 cm(2) area were used as field-emitter arrays. It was found that the arrays exhibited a low onset vo ltage for field emission, large emission current, as well as high current s tability. (C) 2000 American Institute of Physics. [S0003-6951(00)02041-6].