Resonant-cavity-enhanced p-type GaAs/AlGaAs quantum-well infrared photodetectors

Authors
Shen, A Liu, HC Gao, M Dupont, E Buchanan, M Ehret, J Brown, GJ Szmulowicz, F
Citation
A. Shen et al., Resonant-cavity-enhanced p-type GaAs/AlGaAs quantum-well infrared photodetectors, APPL PHYS L, 77(15), 2000, pp. 2400-2402
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
15
Year of publication
2000
Pages
2400 - 2402
Database
ISI
SICI code
0003-6951(20001009)77:15<2400:RPGQIP>2.0.ZU;2-8
Abstract
Resonant cavities are used to enhance the absorption efficiency in p-type G aAs/AlGaAs quantum-well infrared photodetectors. The cavities are fabricate d by applying thick gold films on the detector bottom sides after substrate removal via selective wet etching. The observed peak enhancement and spect ral shape are in good agreement with model predictions. Peak absorption of about 25% is obtained for the device studied. (C) 2000 American Institute o f Physics. [S0003-6951(00)04441-7].