Dielectric properties of thin film Al-1/Sb2Pb1Se7/Al devices

Authors
Wagle, S Shirodkar, V
Citation
S. Wagle et V. Shirodkar, Dielectric properties of thin film Al-1/Sb2Pb1Se7/Al devices, BRAZ J PHYS, 30(3), 2000, pp. 554-559
Citations number
20
Categorie Soggetti
Physics
Journal title
BRAZILIAN JOURNAL OF PHYSICS
ISSN journal
01039733 → ACNP
Volume
30
Issue
3
Year of publication
2000
Pages
554 - 559
Database
ISI
SICI code
0103-9733(200009)30:3<554:DPOTFA>2.0.ZU;2-V
Abstract
Metal - glass metal, MGM, thin film devices are prepared using vacuum depos ition of Sb2Pb1Se7 compound. The capacitance and the loss tangent variation as a function of temperature and frequencyis studied. The observed charact eristics are explained using small signal ac circuit analysis. It is shown that the theoretical curve generated using the ac circuit analysis gives ex cellent fitting with the experimental curve.