new equipment technology for chemical vapor deposition - .2. Modelling of pure silicon desposition from silane and insitu phosphorus doped silicon

A better understanding of Chemical Vapour Deposition (CVD) process can be o btained by modelling the phenomena involved in CVD reactors. The establishe d model is then a useful tool for industrial equipment design and for the o ptimization of operating conditions. The research for optimal operating con ditions is done by a more rational and efficient way using a model. The spe cific case of the polycristalline silicon deposition from silane in a new t echnology of LPCVD reactor is used to illustrate the approach. Hypotheses a nd methods necessary for the development of the model are presented and dis cussed first, then results are described and compared to experimental data. Finally, the more complex case of in situ phophorus doped polysilicon is d iscussed.