MOSFET statistical modeling method using an intermediate model

A method for modeling the variations in MOSFET performance systematically i s proposed in this paper. A characteristic of this method is that the relat ionships between the model parameters and a small number of physical quanti ties governing MOSFET performance are analyzed statistically using intermed iate models. The variations of individual physical quantities are summarize d in a form called an intermediate statistical model. Necessary and suffici ent specific statistical information is reflected by the intermediate stati stical model. A designer can perform transformations of intermediate statis tical models to be incorporated into a MOSFET model desired. Characteristic s of an intermediate statistical model can be accurately reflected with res pect to many models currently in use. In addition, worst-case parameters ca n be easily extracted. Variations of a 0.3-mu m CMOS process are modeled ex perimentally as an example to verify the efficacy of this method. (C) 2000 Scripta Technica.