188GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs

Authors
Tang, Z Hsia, H Kuo, HC Caruth, D Stillman, GE Feng, M
Citation
Z. Tang et al., 188GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs, ELECTR LETT, 36(19), 2000, pp. 1657-1659
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
19
Year of publication
2000
Pages
1657 - 1659
Database
ISI
SICI code
0013-5194(20000914)36:19<1657:1DIH>2.0.ZU;2-3
Abstract
The authors have fabricated 0.14 mu m T-gate, doped-channel In0.8Ga0.2P/In0 .53Ga0.47As/InP HFETs. An extrinsic peak transconductance of 722mS/mm and a maximum current density of 761mA/mm were obtained. The doped-channel HFET exhibits excellent RF performance with f(T) = 188GHz and f(max) = 225GHz at V-ds = 1.5V. These are state-of-the-art results for doped-channel HFETs, a nd are comparable to the best reported performance of InP p-HEMTs with simi lar gate length.