Behaviour of CuInGaSe2 solar cells under light irradiation

The behaviour of CIGS solar cells using a light irradiation test is investi gated. The conversion efficiency after the test increases by similar to 25 %. This is mainly due to the increase in Ise and FF and the lowering of the series resistance. It is also shown that the performance of the diode decr eases, because the Value of the diode factor increases from 1.9 to 2.4. In addition, the changes in the junction condition and generation of defects a re suggested to be based on the measurement of electro-luminescence and the photo-absorption current spectrum by the light below the sensitivity of th e cell.