Citation
S. Rennon et al., Quantum-dot microlasers, ELECTR LETT, 36(18), 2000, pp. 1548-1550
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
36
Issue
18
Year of publication
2000
Pages
1548 - 1550
Database
ISI
SICI code
0013-5194(20000831)36:18<1548:QM>2.0.ZU;2-#
Abstract
Edge-emitting short-cavity lasers with deeply-etched Bragg mirrors were fab
ricated on a GaInAs/AlGaAs laser structure with a single active las er of s
elf-organised GaInAs quantum-dots. Continuous wave operation has been achie
ved down to cavity lengths of 16 mu m with a minimum threshold current of 1
.2mA for 30 mu m-long devices.