Metamorphic pin diodes for high isolating and low power consuming millimetre-wave switching MMICs

Authors
Ziegler, V Deufel, R Wolk, C Gassler, C Dickmann, J Schumacher, H
Citation
V. Ziegler et al., Metamorphic pin diodes for high isolating and low power consuming millimetre-wave switching MMICs, ELECTR LETT, 36(18), 2000, pp. 1556-1557
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
18
Year of publication
2000
Pages
1556 - 1557
Database
ISI
SICI code
0013-5194(20000831)36:18<1556:MPDFHI>2.0.ZU;2-C
Abstract
Two broadband millimetre-wave switching circuits using In0.52Ga0.48As pin d iodes grown on a GaAs substrate are presented. To the best of the authors' knowledge, this is the first time that metamorphic Fin diodes have been use d for switching MMICs. The performance of the pin diodes are discussed and excellent BF results from a single pole single throw (SPST) and single pole double throw (SPDT) snitch are demonstrated.