Solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors

Authors
Li, T Lambert, DJH Beck, AL Collins, CJ Yang, B Wong, MM Chowdhury, U Dupuis, RD Campbell, JC
Citation
T. Li et al., Solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors, ELECTR LETT, 36(18), 2000, pp. 1581-1583
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
18
Year of publication
2000
Pages
1581 - 1583
Database
ISI
SICI code
0013-5194(20000831)36:18<1581:SAMUP>2.0.ZU;2-D
Abstract
Solar-blind Schottky metal-semiconductor-metal photodetectors fabricated on epitaxial Al0.4Ga0.6N layers grown by metalorganic chemical vapour deposit ion are reported. The devices exhibit low dark current and an external quan tum efficiency as high as 49% (at lambda = 272nm) at 90V bias, with a corre sponding responsivity R = 107mA/W. A visible-to-UV rejection factor of more than three orders of magnitude is demonstrated. The 3dB bandwidth is 100MH z and the detectivity is estimated to be 3.3 x 10(10)cm.Hz(1/2)/W.