1200 V fully implanted JI technology

A novel 1200V fully implanted junction isolation technology for high voltag e integrated circuits (HVICs) is proposed. This technique employs the varia tion in lateral doping (VLD) technique to achieve change in the thickness a s well as the concentration of the drift region in a lateral power device t o enable effective distribution of the electric field and low on-state resi stance. Detailed 2D numerical simulations clearly validate this new approac h and show enhancement performance of a lateral MOSFET in comparison to a d evice with a uniformly doped drift region.