Fabrication of masks for DUV and EUV lithography using silicide direct-write electron beam lithography process

Authors
Lavallee, E Beauvais, J Drouin, D
Citation
E. Lavallee et al., Fabrication of masks for DUV and EUV lithography using silicide direct-write electron beam lithography process, ELECTR LETT, 36(18), 2000, pp. 1589-1590
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
18
Year of publication
2000
Pages
1589 - 1590
Database
ISI
SICI code
0013-5194(20000831)36:18<1589:FOMFDA>2.0.ZU;2-T
Abstract
Silicide direct-write electron beam lithography (SiDWEL) is a high resoluti on lithography process which does not require spin-coating. The silicide st ructures formed by SiDWEL are used as masks for the fabrication of DUV and EW lithography mask elements. Resolutions better than 250nm for chromium DU V masks and 200nm for tantalum EUV masks are obtained.