Removal of NF3 from semiconductor-process flue gases by tandem packed-bed plasma and adsorbent hybrid systems

A tandem hybrid gas cleanup system, consisting of a BaTiO3 packed-bed plasm a reactor and a CaCO3 adsorbent filter, was used to study the removal of NF 3 from semiconductor-process flue gases. Plasma-chemical kinetics of N-2-NF 3-O-2-H-2 gas mixtures suggested byproducts observed in the experiments. Th e laboratory-scale system showed NF3 removal at atmospheric pressure. Typic ally, 100% NF3 abatement was achieved with an inlet concentration of 5000 p pm and a gas residence time in the reactor less than 10 s.