Non-destructive repetitive readout in high resolution silicon detectors.

The, theoretical basis of the non-destructive repetitive readout:are review ed. The shape of the induced charge and current signals is discussed. The o ptimum filter with assigned time domain constraints (e.g. arbitrary finite duration) and in presence of any kind of uncorrelated, stationary, addition al noises has been calculated for boundary cases of the induced current sig nal shape. A test structure to perform non destructive repetitive readout of the signa ls from high resolution detectors built on a high-purity silicon substrate such as Silicon Drift Detectors and fully depleted pn Charge-Coupled Device s has been designed and produced.