High resolution CdZnTe pixel detectors with VLSI readout

Citation
Wr. Cook et al., High resolution CdZnTe pixel detectors with VLSI readout, IEEE NUCL S, 47(4), 2000, pp. 1454-1457
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
4
Year of publication
2000
Part
1
Pages
1454 - 1457
Database
ISI
SICI code
0018-9499(200008)47:4<1454:HRCPDW>2.0.ZU;2-V
Abstract
CdZnTe pixel detectors with a custom VLSI readout, are being developed at C altech/JPL for use in focusing hard X-ray telescopes. We have recently test ed several prototype detector assemblies, each consisting of a 2 mm thick C dZnTe pixel detector indium bump bonded to our VLSI readout chip. A complet e pulse height analysis chain is located directly below each 680 by 650 mu m pixel and includes a preamplifier, shaping amplifiers, and a peak stretch er/discriminator. Here we report on the first fully functional operation of these detector/VLSI hybrids. Using an Am-241 source, collimated to illumin ate a single pixel, excellent energy resolution of 670 eV FWHM was measured for the 59.5 keV line at -10C, with electronic noise of only 340 eV FWHM. Illumination with an uncollimated Am-241 source was performed to assess the uniformity of pixel response and to exercise the readout chip's ability to process multiple pixel events arising from X-rays interacting above pixel boundaries. The imaging capability of the detector was demonstrated using a tungsten slit mask.