Physical modeling of silicon microstrip detectors: Influence of the electrode geometry on critical electric fields.

In this paper, a computer-based analysis of AC-coupled silicon microstrip d etectors is presented. The study aims at investigating the main geometrical parameters responsible for potentially critical effects, such as early mic ro-discharges and breakdown phenomena. The adoption of CAD tools allows for evaluating the actual field distribution within the device, and makes it p ossible to identify critical regions. The adoption of overhanging metal str ips is shown to have a positive impact on the electric:field distribution, reducing corner effects and thus minimizing breakdown risks.