Citation
Nn. Bezryadin et al., Preparation of In2Se3 layers on InAs by heterovalent substitution, INORG MATER, 36(9), 2000, pp. 864-867
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685
→ ACNP
Volume
36
Issue
9
Year of publication
2000
Pages
864 - 867
Database
ISI
SICI code
0020-1685(200009)36:9<864:POILOI>2.0.ZU;2-J
Abstract
In2Se3/InAs heterojunctions prepared by heterovalent substitution via annea
ling in Se vapor in a quasi-closed reactor were studied by scanning electro
n microscopy, electron-probe x-ray microanalysis, and electron diffraction
in reflection and transmission.