Properties of heterojunctions in the system n-CdTe-p-ZnTe

Citation
Pn. Gorlei et al., Properties of heterojunctions in the system n-CdTe-p-ZnTe, INORG MATER, 36(9), 2000, pp. 871-873
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
36
Issue
9
Year of publication
2000
Pages
871 - 873
Database
ISI
SICI code
0020-1685(200009)36:9<871:POHITS>2.0.ZU;2-V
Abstract
Heterojunctions in the n-CdTe-p-ZnTe system were prepared via solid-state s ubstitutions, and their properties were studied. Under small forward bias, the current-voltage characteristics of the heterojunctions, both in the dar k and under illumination, are dominated by the generation-recombination pro cesses in the space-charge region. The spectral response of the heterojunct ions extends from the band gap of CdTe to that of ZnTe.