A Monte Carlo study of dislocation growth and etching of crystals

Citation
Hm. Cuppen et al., A Monte Carlo study of dislocation growth and etching of crystals, J CRYST GR, 219(1-2), 2000, pp. 165-175
Citations number
27
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
219
Issue
1-2
Year of publication
2000
Pages
165 - 175
Database
ISI
SICI code
0022-0248(200010)219:1-2<165:AMCSOD>2.0.ZU;2-2
Abstract
It is well known that screw dislocations are step sources that allow crysta ls to grow at low driving forces. Growth is accelerated at the outcrop of a screw dislocation generating a spiral hillock. This makes the intersection of a screw dislocation and a crystal surface a so-called velocity source. In this paper the interaction between dislocation growth, 2D-nucleation and misorientation step flow is investigated for a wide range of driving force s by means of Monte Carlo simulations of growth of the Kossel (100) surface . The interactions between the different growth mechanisms are shown to agr ee with a general model for velocity source behavior, which allows for a si mple analytical expression of the growth rate. This expression can be used in a continuum description of crystal growth. Finally, dislocation etching is studied and compared with dislocation growth. (C) 2000 Elsevier Science B.V. All rights reserved.