Deposition of hexagonal GaN using n-propylamine as a nitrogen precursor

A new gaseous mixture containing n-propylamine, trimethylgallium (TMG) and ammonia was used to deposit gallium nitride films. Pure and transparent, po lycrystalline films were obtained and analysed by scanning electron microsc opy (SEM) and Raman spectroscopy. n-Propylamine has an important influence on the crystal structure of the resulting gallium nitride deposits, and the presence of n-propylamine in the reaction system thus provides a new solut ion for deposition of high-quality gallium nitride films. (C) 2000 Elsevier Science B.V. All rights reserved.