Growth of M-plane GaN(1(1)over-bar-00) on gamma-LiAlO2(100)

Using RF plasma-assisted molecular beam epitaxy, we succeeded in the growth of GaN(1 (1) over bar 0 0) on gamma-LiAlO2(1 0 0). The crystal orientation and structural properties of 1.5 mu m thick GaN films are investigated by means of reflection high-energy electron diffraction, X-ray diffraction, at omic force microscopy and Raman scattering. The layers are shown to be sing le-phase GaN(1 (1) over bar 0 0) within the measurements' sensitivity. The inherent anisotropy of the GaN (1 (1) over bar 0 0) plane is reflected in t he observed anisotropy of in-plane stresses, mosaicities and surface morpho logy. (C) 2000 Elsevier Science B.V, All rights reserved.