A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4

The surface reaction mechanism of Si1-xGex/Si growth using SiH4 and GeH4 in UHV/CVD system was studied. The saturated adsorption and desorption of SiH 4 from Si(1 0 0) surface was investigated with the help of TPD and RHEED, a nd it was found that all the 4 hydrogen atoms of one SiH4 molecule were ads orbed to the Si surface, which meant that the dissociated adsorption ratio was proportional to 4 power of surface vacancies. The analysis of the react ion of GeH4 was also done. A new surface reaction kinetic model on Si1-xGex /Si epitaxial growth under UHV conditions by SiH4/GeH4 was proposed based o n these studies. The predictions of the model were verified by the experime ntal results. (C) 2000 Elsevier Science B.V. All rights reserved.