Growth and characterization of LiInS2 single crystals

Citation
L. Isaenko et al., Growth and characterization of LiInS2 single crystals, J CRYST GR, 218(2-4), 2000, pp. 313-322
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
218
Issue
2-4
Year of publication
2000
Pages
313 - 322
Database
ISI
SICI code
0022-0248(200009)218:2-4<313:GACOLS>2.0.ZU;2-9
Abstract
Bulk LiInS2 single crystals were grown using the Bridgman-Stockbarger techn ique. The crystals were characterized in composition, structure and defects . The composition was determined both in average and local versions, the la tter was carried out using the unique differential dissolution technique. F or all crystals a departure from ideal LiInS2 stoichiometry, especially for cations, was detected. In the optical absorption spectra a strong band at 360 nm which disappears after annealing in S-2 vapor was, with a high proba bility, related to sulfur vacancies V-S: their oscillator strength is f gre ater than or equal to 1.3*10(-4). The blue photoluminescence in all crystal s is likely to be due to In-Li antisite defect with an energy level 0.62 eV below the conduction band. The universal values of forbidden band gap, E-g are 3.72 and 3.57 eV at 80 and 300 K, respectively, for all crystals studi ed indicating the similar character of dominant bonds. (C) 2000 Elsevier Sc ience B.V. All rights reserved.