Electrical characterization of semi-insulating devices for electrophotography

Authors
Citation
I. Chen et Mk. Tse, Electrical characterization of semi-insulating devices for electrophotography, J IMAG SC T, 44(5), 2000, pp. 462-465
Citations number
3
Categorie Soggetti
Optics & Acoustics
Journal title
JOURNAL OF IMAGING SCIENCE AND TECHNOLOGY
ISSN journal
10623701 → ACNP
Volume
44
Issue
5
Year of publication
2000
Pages
462 - 465
Database
ISI
SICI code
1062-3701(200009/10)44:5<462:ECOSDF>2.0.ZU;2-2
Abstract
It has been shown that in semi-insulating films, the characterization of ch arge transport phenomena, such as dielectric relaxation, by resistance and capacitance only is insufficient. The independent roles played by additiona l transport parameters, including charge injection, trapping and field depe ndent mobility, are elucidated by a first principle treatment of charge tra nsports in both the closed circuit and open circuit modes. Experimental res ults from typical electrophotographic paper and charging roll samples are c ompared with the results of mathematical simulations. The advantage of open circuit measurements, such as Electrostatic Charge Decay (ECD), is noted.