QUANTUM HALL LIQUID-TO-INSULATOR TRANSITION IN IN1-XGAXAS INP HETEROSTRUCTURES/

Authors
PAN W SHAHAR D TSUI DC WEI HP RAZEGHI M
Citation
W. Pan et al., QUANTUM HALL LIQUID-TO-INSULATOR TRANSITION IN IN1-XGAXAS INP HETEROSTRUCTURES/, Physical review. B, Condensed matter, 55(23), 1997, pp. 15431-15433
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
55
Issue
23
Year of publication
1997
Pages
15431 - 15433
Database
ISI
SICI code
0163-1829(1997)55:23<15431:QHLTII>2.0.ZU;2-Y
Abstract
We report a temperature- and current-scaling study of the quantum Hall liquid-to-insulator transition in an In1-xGaxAs/InP heterostructure. When the magnetic field is at the critical field B-c, rho(xx) = 0.86h/ e(2). Furthermore, the transport near B-c scales as \B - B-c\T-kappa w ith kappa = 0.45 +/- 0.05, and as \B - B-c\I-b with b = 0.23 +/- 0.05. The latter can be due to phonon emission in a dirty piezoelectric med ium, or can be the consequence of critical behavior near B-c, within w hich z = 1.0 +/- 0.1 and nu = 2.1 +/- 0.3 are obtained from our data.