Interface structure of face-centered-cubic-Ti thin film grown on 6H-SiC substrate

Citation
Y. Sugawara et al., Interface structure of face-centered-cubic-Ti thin film grown on 6H-SiC substrate, J MATER RES, 15(10), 2000, pp. 2121-2124
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
15
Issue
10
Year of publication
2000
Pages
2121 - 2124
Database
ISI
SICI code
0884-2914(200010)15:10<2121:ISOFTF>2.0.ZU;2-M
Abstract
A titanium thin film was deposited on the flat (0001) face of a GH-SIC by e lectron beam evaporation at room temperature in a vacuum of 5.1 x 10(-8) Pa . The Ti film was epitaxially grown on the surface, and the interface betwe en Ti and SiC was characterized by high-resolution electron microscopy. It was found that the structure of the deposited titanium is face-centered cub ic (fcc), although bulk titanium metal usually has a hexagonal close-packed or body-centered cubic crystal structure. We believe that the unusual fee structure of Ti thin film is due to the high adhesion of the film to the su bstrate and the high degree of coherency between them. The orientation rela tionship of the fcc-Ti/6H-SiC interface was (111)(fcc-Ti)//(0001)(6H-SiC) a nd [(1) over bar 00](fcc-Ti)//[11 (2) over bar 0](6H-SiC). Preliminary calc ulations indicate that this orientation relationship maximizes the lattice coherency across the interface.