The synthesis and characteristics of SiC nanopowder produced by chemical vapor reaction of SiH4-C2H4-H-2 system

SiC nanometer powders were synthesized by the chemical vapor reaction of th e SiH4-C2H4-H-2 system in the temperature range between 1423 K and 1673 K. The effects of processing conditions such as reactive temperature, gas comp osition ratio, and total flow rate on powder characteristics were studied u sing transmission electron microscopy, x-ray diffraction, infrared, Brunaue r-Emmett-Teller, and chemical analyses. A forming mechanism has been propos ed for solid and hollow particles in different processing conditions. The e xperimental results concerning particle growth are discussed according to t he model of G.D. Ulrich er nl., which considers both collision and coalesce nce phenomena.