AB-INITIO MOLECULAR-ORBITAL STUDY ON THE SURFACE-REACTIONS OF METHANEAND SILANE PLASMA CHEMICAL-VAPOR-DEPOSITION

Citation
K. Sato et al., AB-INITIO MOLECULAR-ORBITAL STUDY ON THE SURFACE-REACTIONS OF METHANEAND SILANE PLASMA CHEMICAL-VAPOR-DEPOSITION, Physical review. B, Condensed matter, 55(23), 1997, pp. 15467-15470
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
55
Issue
23
Year of publication
1997
Pages
15467 - 15470
Database
ISI
SICI code
0163-1829(1997)55:23<15467:AMSOTS>2.0.ZU;2-O
Abstract
Hydrogen-elimination reactions on the substrate surface of methane pla sma are studied on the basis of an ab initio molecular-orbital method. The activation energy of the reaction of the rate determining step (b y MP2/3-21G//HF/3-21G) is much higher than the analogous reaction in s ilane plasma. In the case of carbon surface reactions, the activation energy becomes larger; as the model cluster size becomes larger, while in the case of silicon surface reactions,the activation energy become s lower as the model cluster size becomes larger. Thermodynamically, t he relative stability of the reactant and the product of the hydrogen elimination reaction on the substrate surface of methane plasma are si milar to that of silane plasma. Thus the methane plasma surface reacti ons are expected to be qualitatively different from silane plasma surf ace reactions at low substrate temperatures, while they are expected t o be similar at high substrate temperatures.