PROPAGATING HIGH-ELECTRIC-FIELD DOMAINS IN SEMIINSULATING GAAS - EXPERIMENT AND THEORY

Citation
F. Piazza et al., PROPAGATING HIGH-ELECTRIC-FIELD DOMAINS IN SEMIINSULATING GAAS - EXPERIMENT AND THEORY, Physical review. B, Condensed matter, 55(23), 1997, pp. 15591-15600
Citations number
33
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
55
Issue
23
Year of publication
1997
Pages
15591 - 15600
Database
ISI
SICI code
0163-1829(1997)55:23<15591:PHDISG>2.0.ZU;2-G
Abstract
Semi-insulating GaAs exhibits, at a field of about 1 kV/cm, a strong n on-Ohmic conduction and negative differential resistance and is conseq uently suitable for the investigation of nonlinear systems and determi nistic chaos. In this paper we explain both experimentally and theoret ically, how the homogeneous electric-field distribution loses its stab ility in favor of a stable, propagating, high-electric-field domain. F urthermore, we provide detailed information about the microscopic stru cture of the steady-state domain and we explain that the onset of chao s is related to the interaction between subsequent domains.