COHERENT TO PHONON RELAXATION IN GAAS AND INP

Authors
GANIKHANOV F VALLEE F
Citation
F. Ganikhanov et F. Vallee, COHERENT TO PHONON RELAXATION IN GAAS AND INP, Physical review. B, Condensed matter, 55(23), 1997, pp. 15614-15618
Citations number
35
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
55
Issue
23
Year of publication
1997
Pages
15614 - 15618
Database
ISI
SICI code
0163-1829(1997)55:23<15614:CTPRIG>2.0.ZU;2-L
Abstract
Relaxation of coherent TO phonons is investigated in bulk GaAs and InP using an infrared time-resolved coherent anti-Stokes Raman scattering technique. Measurements were performed as a function of the crystal t emperature in the range 10-300 K permitting determination of the domin ant TO phonon relaxation channels. The experimental results an consist ent with TO phonon decay into a TA and a LA phonon in GaAs while in In P decay into two identical energy LA phonons dominates at low temperat ures.