THERMOELASTIC AND ELECTRONIC STRAIN CONTRIBUTIONS TO THE FREQUENCY TRANSMISSION PHOTOACOUSTIC EFFECT IN SEMICONDUCTORS

Authors
TODOROVIC DM NIKOLIC PM BOJICIC AI RADULOVIC KT
Citation
Dm. Todorovic et al., THERMOELASTIC AND ELECTRONIC STRAIN CONTRIBUTIONS TO THE FREQUENCY TRANSMISSION PHOTOACOUSTIC EFFECT IN SEMICONDUCTORS, Physical review. B, Condensed matter, 55(23), 1997, pp. 15631-15642
Citations number
29
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
55
Issue
23
Year of publication
1997
Pages
15631 - 15642
Database
ISI
SICI code
0163-1829(1997)55:23<15631:TAESCT>2.0.ZU;2-X
Abstract
The photoacoustic effect is investigated as a function-of the modulati on frequency in a transmission detection configuration for semiconduct or samples. The theoretical model for this configuration is given for the thermal and elastic processes besides the carrier-transport charac teristics. The dependence of the photoacoustic effect on thermodiffusi on, thermoelastic, and electronic-transport parameters is identified. The experimental photoacoustic data for Si samples are tested and they exhibit satisfactory agreement with the theoretical model.