Determination of thermal annealing effect in intrinsic a-Si : H film

In this study, the bias annealing effect on the density of state (DOS) in a morphous silicon film on single crystalline of silicon was investigated by means of Au/a-Si:H/c-Si/Al heterostructure. In order to fabricate the struc ture, at first, a-Si:H film was coated on a single crystalline silicon subs trate by means of a de magnetron sputtering technique and then gold and alu minum metal contacts were applied on the top of a-Si:H and c-Si, respective ly. The samples were annealed in the annealing temperature range 110-175 de grees C with the negative end of the applied bias voltage kept at the gold side and the capacitance-voltage characteristics heterostructure was measur ed. DOS around midgap of the i-region was determined by drive-level capacit ance technique and the effect of thermal annealing on the DOS was indicated . (C) 2000 Elsevier Science B.V. All rights reserved.