Bonding structure and properties of ion enhanced reactive magnetron sputtered silicon carbonitride films

Amorphous silicon carbonitride (a-SiCN) films were synthesized by ion enhan ced radio-frequency (rf) magnetron sputtering from a Si4C target using a mi xture of Ar and N-2 gases. The oxidation resistance of the films was invest igated in an oxygen atmosphere over the temperature range of 0-1000 degrees C. X-ray photoelectron spectroscopy showed that the a-SiCN films exhibited a well-defined Si-C-N bonding structure. The composition, density, hardnes s, and stress were uniquely characterized with respect to the average energ y per deposited atom. Under optimum deposition conditions a-SiCN films can be prepared to exhibit high density (>2.6 g cm(-3)), high hardness (>25 GPa ), and enhanced oxidization resistance at temperatures up to 800 degrees C.