Porous anodic etching of p-Cd1-xZnxTe studied by photocurrent spectroscopy

Authors
Erne, BH Mathieu, C Vigneron, J Million, A Etcheberry, A
Citation
Bh. Erne et al., Porous anodic etching of p-Cd1-xZnxTe studied by photocurrent spectroscopy, J ELCHEM SO, 147(10), 2000, pp. 3759-3767
Citations number
66
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651 → ACNP
Volume
147
Issue
10
Year of publication
2000
Pages
3759 - 3767
Database
ISI
SICI code
0013-4651(200010)147:10<3759:PAEOPS>2.0.ZU;2-5
Abstract
Anodic treatment of p-Cd1-xZnxTe (x = 0, 0.05, and 0.12) in 0.5 M H2SO4 lea ds to the formation of a network of pores which can extend more than 100 mu m below the top surface. Photocurrent spectroscopy reveals the presence of Te-o on the surface of the pores. The Te-o film is on average thin (less t han or equal to 5 Angstrom), in contrast to the thicker film obtained by ph otoanodic etching of n-CdTe. The photocurrent spectra are affected not only by the absorbance of Te-degrees, but also by recombination in the porous l ayer. (C) 2000 The Electrochemical Society. S0013-4651(00)02-066-8. All rig hts reserved.