Analysis of epitaxy of polysilicon films on silicon (100) wafers depositedwith enlarged microwave plasma

New semiconductor technologies for 300 mm wafer processing have been develo ped to meet the requirements for the next generation device fabrication. On e of the strong candidates for supporting 300 mm semiconductor manufacturin g is enlarged microwave plasma deposition technology. The polysilicon films deposited with enlarged microwave plasma technology were studied in this w ork. The deposited polysilicon films with the enlarged microwave plasma tec hnology showed a variety of crystallinity as well as epitaxy on silicon sub strates even at 430 degrees C substrate temperature. This low temperature d eposition is very promising for application to the 300 mm semiconductor man ufacture since the more crystallinity guarantees the better device performa nce. It was shown that the slower deposition rates promoted the higher crys tallinity. It was also observed that the crystallographic orientations of t he polysilicon grains changed gradually during deposition, and this was mod eled and explained. It was therefore concluded that the enlarged microwave plasma deposition technology will be an important part of the future techno logies for the giga dynamic random access memory era. (C) 2000 The Electroc hemical Society. S0013-4651(99)11-035-8. All rights reserved.