A general optimization for slurry injection position and injection rate dur
ing chemical mechanical polishing, which is valid for the Rodel SUBA 400 pa
d with 150, 200, and 300 mm wafers and the Rodel POLITEX DG pad with 200 mm
wafer, is presented. The existing experimental data for the Rodel IC 1000
pad with 3 in, wafer reconfirms this general optimization for slurry inject
ion position. This general optimization for slurry injection radial positio
n R-i is at the wafer edge R-we for three azimuth angles, 3, 6. and 9 o'clo
ck considered. A maximum mean gray scale and a minimum nonuniformity can be
simultaneously obtained by using R-i/R-we = 1. The general optimum slurry
injection rate Q is 150 mL/min, however, 100 mL/min would be suggested for
the 150 and 200 mm wafers because of significant reduction of slurry usage
with little changes of mean gray scale and nonuniformity. (C) 2000 The Elec
trochemical Society. S0013-4651(00)02-110-8. All rights reserved.