MODIFIED PEIERLS MECHANISM OF DISLOCATION-MOTION IN A RANDOM-FIELD OFINTERNAL MICROSTRESSES

The effect of a real crystal structure on the mobility of dislocations moving in a crystalline held is simulated by introducing a random fie ld of internal stresses. The allowance for the statistical scatter in the kinetic characteristics of elementary dislocation motion dictates the use of the probabilistic description instead of the conventional t heory based on the Peierls mechanism. In addition to modes observed in an ideal crystal, new modes of dislocation motion implemented in a re al crystal are considered and classified over wide ranges of temperatu res and stresses. The results obtained allow a qualitative interpretat ion of the dislocation mobility under different loads.