SPECIFIC FEATURES OF DEFECT GENERATION IN SI-IMPLANTED GALLIUM-ARSENIDE UNDER RAPID PHOTON ANNEALING()

Studies on the structure and composition of Si+-implanted GaAs layers were performed by the methods of X-ray diffraction, mass-spectrometry of secondary ions, and transmission electron microscopy. The implantat ion doses applied were lower than the dose initiating the amorphizatio n of GaAs layers. After the implantation, the samples were subjected t o a rapid photon annealing. For the radiation defects generated in the layers at different (high and low) implantation doses, the relaxation processes were found to be substantially different. The analysis of t he results showed that, at the early stages of annealing, they become spatially separated vacancy- and interstitial-type radiation defects d ue to the sink of the nonequilibrium defects to the sample surface.