MULTITONE POWER AND INTERMODULATION LOAD-PULL CHARACTERIZATION OF MICROWAVE TRANSISTORS SUITABLE FOR LINEAR SSPAS DESIGN

Citation
R. Hajji et al., MULTITONE POWER AND INTERMODULATION LOAD-PULL CHARACTERIZATION OF MICROWAVE TRANSISTORS SUITABLE FOR LINEAR SSPAS DESIGN, IEEE transactions on microwave theory and techniques, 45(7), 1997, pp. 1093-1099
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00189480
Volume
45
Issue
7
Year of publication
1997
Pages
1093 - 1099
Database
ISI
SICI code
0018-9480(1997)45:7<1093:MPAILC>2.0.ZU;2-J
Abstract
In this paper, an experimental load-pull characterization of microwave transistors operated under N-tone excitations (2 less than or equal t o N less than or equal to 32) is presented, Such characterization is v ery useful to investigate the linearity of high-power amplifiers via i ntermodulation distortion analysis, All the measurements were carried out using a newly developed multiline measurement system which uses an arbitrary waveform generator (AWG) to generate the spectrum of any N desired tones and a microwave transition analyzer (MTA) as a vector re ceiver, The measured intermodulation rejection (IMR) behavior, as the number of tones increases, is compared with previously published theor etical results, Constant output power contours and IMR contours in the Gamma(L)(f(0)) plane for different number of tones are presented and discussed, The dependency of the LMR on the biasing conditions and the carriers' phase distribution is also investigated.