Low-density framework form of crystalline silicon with a wide optical bandgap

Citation
J. Gryko et al., Low-density framework form of crystalline silicon with a wide optical bandgap, PHYS REV B, 62(12), 2000, pp. R7707-R7710
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
12
Year of publication
2000
Pages
R7707 - R7710
Database
ISI
SICI code
0163-1829(20000915)62:12<R7707:LFFOCS>2.0.ZU;2-8
Abstract
Synthesis of a guest-free clathrate form of crystalline silicon was;achieve d by successive vacuum treatment and density separation of NaxSi136-based m aterials. The new allotrope of silicon has an open framework structure base d upon slightly distorted tetrahedral atoms bound into five- and six-member ed ring structures, and corresponds to a fully saturated and condensed full erane-type solid. Theoretical calculations indicate that the new form of si licon should be a wide bandgap semiconductor. This prediction is borne Out by experiment: electrical conductivity and optical absorption measurements yield a band gap of 1.9 eV, approximately twice the value of "normal" semic onducting silicon.