Si(100)-c(4X8) reconstruction formed in a highly nonequilibrium process

A Si(100)-c(4 x 8) reconstruction is formed using a two-step solid phase ep itaxy (SPE) technique. Calculations indicate that the reconstruction has a high surface energy (0.4 eV per surface atom above 2 x 1). Strain releasing mechanisms play a dominant role within the local energy scope around the s urface energy. Dynamic simulations show that the system is kinetically push ed into this energy scope. Analytical modeling of SPE discloses a highly no nequilibrium thermodynamic process in which the surface atoms obtain high k inetic energy by self-overheating and are trapped in the high-energy state by instant self-quenching.