Surface reconstructions for InAs(001) studied with density-functional theory and STM

Citation
C. Ratsch et al., Surface reconstructions for InAs(001) studied with density-functional theory and STM, PHYS REV B, 62(12), 2000, pp. R7719-R7722
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
12
Year of publication
2000
Pages
R7719 - R7722
Database
ISI
SICI code
0163-1829(20000915)62:12<R7719:SRFISW>2.0.ZU;2-O
Abstract
The stability of different surface reconstructions on InAs(001) is investig ated theoretically and experimentally. Density-functional theory calculatio ns predict four different surface reconstructions to be stable at different chemical potentials. The two dominant reconstructions are the beta 2 (2x4) for high As, and the alpha 2 (2x4) for low As overpressure. This trend is confirmed by scanning tunneling microscopy of carefully annealed InAs(001) surfaces. A similar behavior is predicted for GaAs(001).