The stability of different surface reconstructions on InAs(001) is investig
ated theoretically and experimentally. Density-functional theory calculatio
ns predict four different surface reconstructions to be stable at different
chemical potentials. The two dominant reconstructions are the beta 2 (2x4)
for high As, and the alpha 2 (2x4) for low As overpressure. This trend is
confirmed by scanning tunneling microscopy of carefully annealed InAs(001)
surfaces. A similar behavior is predicted for GaAs(001).