Single-electron spectroscopy in a coupled triple-dot system: Role of interdot electron-electron interactions

We report on low-temperature single electron tunneling measurements of a co upled triple-dot system with tunable gate fabricated on a silicon-on-insula tor structure. Conductance peak positions have been measured as a function of the interdot tunneling constant. We observe one peak at small values of the tunneling constant, and, as the tunneling constant increases, we find t hat this peak splits into several peaks with uneven spacings. This observed behavior of the conductance peak positions has been modeled by a three-sit e extended Hubbard model with interdot electron-electron interactions.