Xl. Wu et al., Stabilized electronic state and its luminescence at the surface of oxygen-passivated porous silicon, PHYS REV B, 62(12), 2000, pp. R7759-R7762
Photoluminescence (PL) spectra of as-made porous Si samples were obtained i
n a wide peak-wavelength range. After exposure to air or coupling with C-60
molecules, the PL peak shifts to a pinning wavelength within the range of
610-630 nm. This pinning wavelength is almost independent of the size of th
e original porous Si nanocrystallites and both redshifting and blueshifting
can occur for different sizes. A self-consistent effective-mass calculatio
n shows that the Si=O binding states are responsible for the radiation of t
his pinning wavelength and the blueshift for the large nanocrystallites is
due to the additional potential modulation within the Si nanocrystallite by
the long-range Coulomb interaction of oxygen ions.