Ab initio pseudopotential calculation for TTF-TCNQ and TSeF-TCNQ

Citation
S. Ishibashi et M. Kohyama, Ab initio pseudopotential calculation for TTF-TCNQ and TSeF-TCNQ, PHYS REV B, 62(12), 2000, pp. 7839-7844
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
12
Year of publication
2000
Pages
7839 - 7844
Database
ISI
SICI code
0163-1829(20000915)62:12<7839:AIPCFT>2.0.ZU;2-6
Abstract
We have investigated the electronic structure of I:he quasi-one-dimensional organic conductor TTF-TCNQ [at room temperature (RT) and 100 K] and TSeF-T CNQ (RT); which have isomorphic crystal structure, by an ab initio plane-wa ve pseudopotential band calculation. To express the exchange and correlatio n energy for electrons, we used both the local density approximation and ge neralized gradient approximation for comparison. For each case, electronic band dispersions were calculated along several symmetric lines and tight-bi nding parameters were evaluated. The Fermi surface shape was also obtained. The six sets of results (for three structures and two approximations) were compared systematically.